TIP31 / 31A / 31B / 31C Datasheet
Daftar Isi [Lihat]
TIP31 / 31A / 31B / 31C Datasheet
Silicon NPN Power Transistors
Complement to Type TIP32 / 32A / 32B / 32C
Applications: general purpose amplifier and switching applications.
Package: TO-220C Type
· DC Current Gain -hFE = 25(Min)@ IC= 1.0A
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- TIP31; 60V(Min)- TIP31A
80V(Min)- TIP31B; 100V(Min)- TIP31C
TIP31 / 31A / 31B / 31C Datasheet
Package TIP31 / 31A / 31B / 31C
Dimension TIP31 / 31A / 31B / 31C
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
| SYMBOL | PARAMETER | VALUE | UNIT | |
|---|---|---|---|---|
| VCBO | Collector-Base Voltage | TIP31 | 40 | V |
| TIP31A | 60 | |||
| TIP31B | 80 | |||
| TIP31C | 100 | |||
| VCEO | Collector-Emitter Voltage | TIP31 | 40 | V |
| TIP31A | 60 | |||
| TIP31B | 80 | |||
| TIP31C | 100 | |||
| VEBO | Emitter-Base Voltage | 5 | V | |
| IC | Collector Current-Continuous | 3 | A | |
| ICM | Collector Current-Pulse | 5 | A | |
| I | Base Current | 1 | A | |
| PC | Collector Power Dissipation TC=25℃ | 40 | W | |
| Collector Power Dissipation Ta=25℃ | 2 | W | ||
| Tj | Junction Temperature | 150 | ℃ | |
| Tstg | Storage Ttemperature Range | -65~150 | ℃ | |
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
| SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VCEO(SUS) | Collector-Emitter Sustaining Voltage |
TIP31 | IC= 30mA; IB= 0 | 40 | V | |
| TIP31A | 60 | V | ||||
| TIP31B | 80 | V | ||||
| TIP31C | 100 | V | ||||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 3A; IB= 0.375A | 1.2 | V | ||
| VBE(on) | Base-Emitter On Voltage | IC= 3A ; VCE= 4V | 1.8 | V | ||
| ICES | Collector Cutoff Current | TIP31 | VCE= 40V; VEB= 0 | 0.2 | mA | |
| TIP31A | VCE= 60V; VEB= 0 | |||||
| TIP31B | VCE= 80V; VEB= 0 | |||||
| TIP31C | VCE= 100V; VEB= 0 | |||||
| ICEO | Collector Cutoff Current | TIP31/31A | VCE= 30V; IB= 0 | 0.3 | mA | |
| TIP31B/31C | VCE= 60V; IB= 0 | |||||
| IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | 1.0 | mA | ||
| hFE-1 | DC Current Gain | IC= 1A ; VCE= 4V | 25 | |||
| hFE-2 | DC Current Gain | IC= 3A ; VCE= 4V | 10 | 50 | ||
| fT | Current-Gain—Bandwidth Product | C= 0.5A ; VCE= 10V | 3 | MHZ | ||
Characteristics TIP31 / 31A / 31B / 31C
Related Posts
- 2SA1943 Datasheet2SA1943 Datasheet Bipolar Transistors Silicon PNP Triple-Diffused Type Complementary to 2SC5200N EQUIVALENTS: TIP2955, MJ2955, MJ15004, 2SA1216 Appl ...
- TIP41 / 41A / 41B / 41C DatasheetTIP41 / 41A / 41B / 41C Datasheet NPN Epitaxial Silicon Transistor Complement to Type TIP42 / 42A / 42B / 42C Applications: Medium power linear switc ...
- TIP3055 DatasheetTIP3055 Datasheet 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS Polarity: NPN Designed for general−purpose switching and amp ...
- TIP32 / 32A / 32B / 32C DatasheetTIP32 / 32A / 32B / 32C Datasheet Silicon PNP Power Transistors Complement to Type TIP31 / 31A / 31B / 31C Applications: Medium power linear an ...
- 2SC5200N Datasheet2SC5200N Datasheet Bipolar Transistors Silicon NPN Triple-Diffused Type Complementary to 2SA1943 EQUIVALENT: 2N3055, TIP3055, MJ15003, 2SC2922 Appli ...
- TIP42 / 42A / 42B / 42C DatasheetTIP42 / 42A / 42B / 42C Datasheet PNP Epitaxial Silicon Transistor Complement to Type TIP41 / 41A / 41B / 41C Applications: Medium power linear switc ...
